GaN epitaxial wafers
We are pleased to inform you that MetroSemi offers customized GaN epitaxial wafers. Our GaN epitaxial wafers are specifically tailored to meet your unique requirements and specifications.
Features Overview
Typical Applications
- High uniformity and good repeatability
- Low RF loss
- “4”, and “6” available
- 5G and 6G wireless communications
- Solid-state RF energy application
Wafer Size and Epi-Structure
Typical Characteristics Datasheet
Features Overview
Typical Applications
- High uniformity and good repeatability
- Low leakage current with excellent
2DEG transport properties - Breakdown voltage ≥ 650 V
- 4”, 6” and 8” available
- RoHS compliant
- Suitable for power HEMTs and low cost
CMOS process, - Suitable for power diodes
Wafer Size and Epi-Structure
Typical Characteristics Datasheet
Features Overview
Typical Applications
- High uniformity and good repeatability
- Low leakage current with excellent
2DEG transport properties - Breakdown voltage ≥ 650 V
- 4”, 6” and 8” available
- RoHS compliant
- P-GaN
- Suitable for power E-mode HEMTs and
low cost CMOS process, - Suitable for power diodes
Wafer Size and Epi-Structure
Typical Characteristics Datasheet
Features Overview
High uniformity and good repeatability
Based on NPSS or AlN template
Wafer Size and Epi-Structure
Optical Characteristics
