FSM 413 MOT (DP)
FSM 413 MOT Wafer Thickness Measurement System Desktop System with Automatic X-Y Stage Non Contact Wafer Thickness Metrology for ultra thin backgrind or chemically etched wafers, Measures patterned, bumped wafers on tapes or bonded on carriers, for stacked die and MEMS Applications
The FSM 413 Echoprobe TM sensor uses a patented infrared (IR) interferometry technique that provides a direct and accurate substrate thickness and total thick- ness variation (TTV) measurement of thick to ultra-thin wafers. Configured as a Single Probe system, several materials transparent to the IR beam, such as Si, GaAs, InP, SiC, Glass, Quartz and many polymers, are readily measured. Sub- strate thickness of conventional wafers with patterns, tapes, bumps or bonded wafers mounted on carriers can be determined with high precision and accuracy. When configured as a Dual Probe system, the FSM413 also provides measure- ments of the total thickness of the wafer, including substrate thickness and the patterned height thickness in cases the beam cannot penetrate through the materi- al. Options are available to measure trench depth and via holes, including high aspect ratio trenches and vias in MEMS type applications. Various specialized MEMS applications including membrane metrology and Bump Height metrology are also optionally available.
APPLICATION:
- Thickness Measurements of Bonded Wafers: Si-Glass, Si-Si, Si-Tape, Si-epoxy GaAs, InP, Sapphire, Quartz
- Trench Depth Measurements: High Aspect Ratio Trench in MEMS
- Surface Roughness Measurements: Backgrind, Etched, Polished wafers
- Bump height (option)
- Trim depth and width (option)
Result Presentation
Specifications
| Technique: | 6Non-contact IR interferometry. Single or Dual Probes available |
| Wafer size: | up to 150, 200, or 300mm available, Customized wafer size also available |
| Substrate: | Si, GaAs, InP, Quartz, Glass, Sic, Sapphire |
| Thickness range: | 15 to 780μm for Single Probe measurement up to 3mm for Dual Probe (Total thickness) Manual |
| Repeatability: | 0.1 μm (Display) 0.2 μm (1 o) in Single Probe** Mode 0.7μm (1 o) in Dual Probe** Mode |
| Measurement Points: | Programmable |
| Substrate Thickness Results: | TTV, Mean, Maximum, Minimum, StDev, 2D and 3D Color Maps |
| Single Probe | 15 ~ 780um |
| Dual Probe | ~ 3mm |
| Wavelength: | 1.3±0.03μ |
FSM 413C2C
The FSM 413 EchoprobeTM sensor provides a direct and accu- rate map of substrate thickness and total thickness varia- tion (TTV) of thick to ultra-thin wafers. It uses a patented Infrared (IR) Interferometric Technique to measure materi- als transparent to the IR beam, such as Si, GaAs, InP, SiC, Glass, Quartz, Sapphire and many polymers. Substrate thickness of conventional wafers with patterns, tapes, bumps or bonded wafers mounted on carriers can be deter- mined with high precision and accuracy. When equipped with as Dual Probe system, the FSM413 also provides meas- urements of the total thickness of the wafer stack including non-transparent materials such as metals. Options are available to measure the wafer warp, trench depth, trim height and depth, and via hole depth.
APPLICATION: BSI CIS, Chip Stacking, MEMS, TSV, Power Devices, Logic & Memory.
- Thin Si wafer thickness down to 1 μm-backgrinding uniformity
- Si/Si, Si/Tape, Glass/Si bonded wafer—bonding uniformity
- CMP – uniformity
- Trench/via (i.e. TSV) depth measurements- etch/scribe uniformity
- Surface roughness (option)
- Bump height (option)
- Trim depth and width (option)
Special Features
- Measures Substrate Thickness in Multiple Layers using
Non-contact Optical System - High Precision XY Stage (0.5m) (optional)
- Pattern Recognition (optional)
- Robotic Handling System
- Programmable Data Points
- Measures Silicon Via Depth with Microscope Option
- Excellent Repeatability & Reproducibility
Specifications
| Spot size: | 6μ ~40μ |
| Working distance: | ~ 20mm |
| Si Thickness range : | |
| Single Probe | 15 ~ 780um |
| Dual Probe | ~ 3mm |
| Wavelength: | 1.3±0.03μ |